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|25th May 2010, 20:00||#1|
Join Date: May 2002
AIST researchers shows the potential of FeRAM in SSDs, 10GB/s write speed
Japanese researchers at AIST have made a breakthrough in NAND flash technology with chips running at only 1V operating voltage. This means less power consumed, but also the possibility of higher write speeds. This is possible thanks to a memory technology called FeRAM (Ferroelectric RAM). The basic idea is to replace conventional NAND flash, commonly used in solid state drives, with FeRAM, or Fe-NAND.
The technology has a crystal structure with ferroelectric field effect transistors where atoms stacks differently depending on the magnetic field they are exposed to. These changes are permanent and the memory doesn't need a constant charge, which DRAM does. This makes it suitable for use in SSDs and other longterm storage products. The only time the memory needs current is when it actually reads and writes data. This could lead to very low power drives.
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