Some time ago, Silicon Power has launched their first PCIe Gen 4.0 SSD with the US70 name with capacities of 1TB and 2TB, promising to surpass all previous offerings sporting the PCIe 3.0 generation. It does incorporate a Phison E16 controller, DRAM buffering but also SLC caching. The rated speeds are up to 5000MB/s for reads and up to 4400MB/s for writes, but these will vary of course depending on the fill rate of the drive, especially when using 3D NAND Flash. The 1TB model we are going to look at in this article has a TBW rating of 1800, while the 2TB version doubles that rating.

The product is shipped in a familiar packaging style, showing the drive characteristics but also features a small plastic window through which the main product is visible:

On the back, we will learn that the product does support NVMe 1.3 specifications, but also obtain information regarding the Silicon Power service centers and the product serial number:

Inside the box we will find the main drive, protected in a transparent plastic mold, also designed to hold drives of other form factors as well:

The frontal area of the US70 drive is covered by a large sticker, where we will be able to spot the product internal code name, serial number but also capacity:

On the back, we will get to see two 3D NAND packages, but also one of the DRAM buffer components:

After removing the included sticker, the rest of the PCB components will become visible:

The SKhynix H5AN4G8NBJR package is a 512MB DDR4-2400 SDRAM chip:

The main controller is a Phison PS5016-E16 with eight 800MT/s NAND channels and supports features such as LDPC-based ECC:

The NAND packages are marked TABBG65AWV with a capacity of 256GB and are basically Toshiba BiCS4 96-layer 3D TLC:

The secondary 512MB DRAM buffer is placed on the back, along with two more 256GB NAND ICs: