Toshiba and SanDisk Announce 48-layer 256Gbit TLC 3D NAND
 

This week Toshiba and SanDisk are announcing a new milestone in their joint development of flash memory. Back in March Toshiba announced a 48-layer 3D NAND technology that they were sampling in the form of a 128Gb MLC die. Now Toshiba and partner SanDisk have built a 256Gb TLC die on their 48-layer process. Toshiba will be sampling that chip starting in September, and SanDisk has selected it as their first 3D NAND device for mass production.

Central to this development is the outfitting of Fab 2 at their facility in Yokkaichi, Japan. The previous Fab 2 was demolished in 2014 and construction started on a replacement to be used as their first fab for 3D NAND. The new Fab 2 has now started pilot production of 3D NAND as it is being readied for mass production, scheduled to begin in 2016. Toshiba says the fab will be completed in the first half of the year and SanDisk plans to be shipping products using their 3D NAND by the end of the year.

http://www.anandtech.com/show/9490/t...it-tlc-3d-nand