Toshiba Develops First 16-die Stacked NAND Flash Memory with TSV Technology
 

Toshiba Corporation today announced the development of the world's first 16-die (max.) stacked NAND flash memory utilizing Through Silicon Via (TSV) technology. The prototype will be shown at Flash Memory Summit 2015, to be held from August 11 to 13 in Santa Clara, USA.

The prior art of stacked NAND flash memories are connected together with wire bonding in a package. TSV technology instead utilizes the vertical electrodes and vias to pass through the silicon dies for the connection. This enables high speed data input and output, and reduces power consumption.

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