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STEC CellCare Technology Delivers Big Boost in 24 nm MLC NAND Flash Memory Endurance STEC CellCare Technology Delivers Big Boost in 24 nm MLC NAND Flash Memory Endurance
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STEC CellCare Technology Delivers Big Boost in 24 nm MLC NAND Flash Memory Endurance
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Old 16th May 2012, 09:08   #1
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Default STEC CellCare Technology Delivers Big Boost in 24 nm MLC NAND Flash Memory Endurance

STEC, Inc., a leading global provider of solid-state drive (SSD) technologies and products, today announced that the company has validated its proprietary CellCare Technology's ability to extend the endurance of 24 nm consumer-grade multi-level cell (cMLC) NAND flash memory to 40,000 program/erase cycles. This represents an increase of greater than 13 times the manufacturer's specified endurance metric of 3,000 program/erase cycles.

This is a significant advancement in one of the company's core technologies, as it provides for the development of a new generation of STEC's enterprise-class SSDs that utilizes low-cost cMLC NAND chips, while still achieving 10 full capacity random writes to the drive each day for five years, and data retention for three months (at 40C)-all with no degradation in performance. This equates to approximately 7.3 petabytes (PB) of data being written to a 400 GB SSD over the life of the drive.

http://www.techpowerup.com/166123/ST...Endurance.html
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