SK Hynix Announces 176-Layer 3D NAND
 

SK hynix has announced their latest generation of 3D NAND, now featuring 176 layers of charge trap flash memory cells. SK hynix is the second NAND manufacturer to reach this layer count, following Micron's announcement that their 176L NAND was starting to ship in Crucial-branded products.

This is SK hynix's third generation to feature their Periphery under Cell (PUC) design to reduce die size by placing peripheral logic under the memory cell array, similar to Intel and Micron's CMOS Under Array design. (SK hynix refers to the combination of this die layout and their charge trap flash cells as "4D NAND".) Changes with this generation include a 35% increase in bit productivity (only slightly less than theoretically possible with the jump from 128 to 176 layers) and a 20% increase in cell read speed. The maximum IO speed between NAND dies and the SSD controller has been increased from 1.2GT/s for their 128L NAND to 1.6GT/s for the 176L NAND.

https://www.anandtech.com/show/16299...6layer-3d-nand