Samsung Reveals 40nm Fabrication Process for DRAM
 

Samsung Electronics, the world’s largest maker of dynamic random access memory (DRAM), on Thursday said it has succeeded in developing 40nm process technology for memory products as well as has successfully validated the first DDR2 memory chips made using the process. According to Samsung, the new manufacturing technology opens doors to both low-power and cost-effective DDR3 as well as DDR4 memory chips.

“Securing extremely advanced technology and system/platform validated operability underscores our commitment as technology leader to deploying the most efficient means of producing DRAM in the marketplace,” said Kevin Lee, vice president of technical marketing at Samsung Semiconductor.

The first memory device to be produced on 40nm node by Samsung is 1Gb DDR2 chip capable of operating at 800MHz. Memory modules based on the new DRAMs have passed Intel Platform Validation program for use with the Intel GM45-series mobile chipsets.

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