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|2nd February 2010, 10:35||#1|
Join Date: May 2002
Samsung to Make DDR3 Memory Using 30nm Process Technology
Samsung Electronics on Monday said that it had successfully completed customer evaluations of 2Gb DDR3 memory chips produced using 30nm-class fabrication process. Samsung is the first company to produce dynamic random access memory at 30nm-class node.
“Our accelerated development of next generation 30nm-class DRAM should keep us in the most competitive position in the memory market. Our 30nm-class process technology will provide the most advanced low-power DDR3 available today and therein the most efficient DRAM solutions anywhere for the introduction of consumer electronics devices and server systems,” said Soo-In Cho, president of memory division at Samsung Electronics.The 30nm-class process when applied to DDR3 mass production raises productivity by 60% over 40nm-class DDR3 and reduces power consumption by up to 30% compared to 50nm-class DRAM, according to the DRAM maker. This will result in a doubling of production cost-efficiency compared to DRAM produced using 50nm to 60nm-class technology.
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