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KOREAN GIANT Samsung claimed it has developed a 60 nanometre eight gigabit NAND flash memory device.
That means an approximately 30 per cent reduction in cell size over its existing 70 nano four gigabit NAND flash it developed last year.

What this means is that Samsung will be able to develop 16GB of storage on one memory card - so storing up to 16 hours of DVD video or around 4,000 MP3 audio files.

Samsung also said it has introduced a two gigabit DDR-2 SDRAM chip which uses 80 nanometre tech, which uses a technology dubbed recess channel array transistor (RCAT) which uses a 3D structural design.

The chip also uses a double poly gate technology, a 20 angstrom ultra thin oxide film process and triple layer metail circuitry.

This technology will start to appear in volume in the second half of next year, allowing the creation of memory modules of up to 8GB.

http://www.theinquirer.net/?article=18567

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