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9th March 2007, 11:49 | #1 |
Madshrimp Join Date: May 2002 Location: 7090/Belgium
Posts: 79,021
| Intel to Sample Phase Change Memory This Year Phase-change memory positioned as a replacement for flash memory, as it has non-volatile characteristics, but is faster and can be scaled to smaller dimensions. Flash memory cells can degrade and become unreliable after as few as 10,000 writes, but PCM is much more resilient at more than 100 million write cycles. For these reasons, Intel believes that phase-change memory could one day replace DRAM. http://www.dailytech.com/article.aspx?newsid=6371
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9th March 2007, 12:22 | #2 |
Posts: n/a
| sounds like a big winner for making harddisks, fast and plenty of writes |
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