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Samsung Mass Producing 10 nm Class High-Performance 128-Gbit 3-bit MLC NAND Flash Samsung Mass Producing 10 nm Class High-Performance 128-Gbit 3-bit MLC NAND Flash
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Samsung Mass Producing 10 nm Class High-Performance 128-Gbit 3-bit MLC NAND Flash
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Old 11th April 2013, 10:12   #1
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Default Samsung Mass Producing 10 nm Class High-Performance 128-Gbit 3-bit MLC NAND Flash

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing a 128-gigabit (Gb), 3-bit multi-level-cell (MLC) NAND memory chip using 10 nanometer (nm)-class process technology this month. The highly advanced chip will enable high-density memory solutions such as embedded NAND storage and solid state drives (SSDs).

"By introducing next-generation memory storage products like the 128Gb NAND chip, Samsung is extremely well situated to meet growing global customer needs," said Young-Hyun Jun, executive vice president, memory sales & marketing, Device Solutions Division, Samsung Electronics. "The new chip is a critical product in the evolution of NAND flash, one whose timely production will enable us to increase our competitiveness in the high density memory storage market."

http://www.techpowerup.com/182650/Sa...AND-Flash.html
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