Samsung Electronics Presents a New Graphene Device Structure
 

Samsung Advanced Institute of Technology, the core R&D incubator for Samsung Electronics, has developed a new transistor structure utilizing graphene, touted as the "miracle material." As published online in the journal Science on Thursday, 17th May, this research is regarded to have brought us one step closer to the development of transistors that can overcome the limits of conventional silicon.

Currently, semiconductor devices consist of billions of silicon transistors. To increase the performance of semiconductors (the speed of devices), the options have to been to either reduce the size of individual transistors to shorten the traveling distance of electrons, or to use a material with higher electron mobility which allows for faster electron velocity. For the past 40 years, the industry has been increasing performance by reducing size. However, experts believe we are now nearing the potential limits of scaling down.

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