Samsung Begins to Produce Hybrid Flash Memory Using 40nm Process Tech
 

Samsung Electronics said on Tuesday that it had begun to produce an 8Gb Flex-OneNAND fusion memory chip, a proprietary memory device that provides both SLC and MLC NAND in a single cost-efficient chip, using 40nm process technology. Samsung’s Flex-OneNAND has been designed for applications that require high speed and high reliability in processing both code and data content.

“Forty nanometer Flex-OneNAND is a tremendous advancement for the memory industry, one which offers a uniquely cost-effective approach to memory selection, while permitting designers the flexibility of adjusting designs up to the final design stage,” said Jim Elliott, memory vice president of Samsung Semiconductor.

Samsung claimed that by adopting advanced 40nm technology, the company achieves an increase in productivity of up to 180% increase in productivity over the first Flex-OneNAND, a 4Gb device designed on 60nm-class technology.

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