Phase change memory is another step closer
INTEL AND NUMONYX have announced a research milestone in the development of stackable, cross-point phase change memory (PCM) technology, which could fundamentally alter the non-volatile memory market in years to come.
PCM uses chalcogenide glass and the application of heat to change states between crystalline and amorphous. In this case, the researchers have developed a way to make both the selector and storage elements based on chalcogenide materials and from that are able to create a vertically integrated memory cell comprised of one PCM element layered with a newly used Ovonic Threshold Switch (OTS) in a true cross point array.
|All times are GMT +1. The time now is 01:35.|
Content Relevant URLs by vBSEO