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Micron Unveils 16-Nanometer Flash Memory Technology
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Old 17th July 2013, 21:15   #1
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Default Micron Unveils 16-Nanometer Flash Memory Technology

Micron Technology, Inc., today announced that it is sampling next-generation, 16-nanometer (nm) process technology, enabling the industry's smallest 128-gigabit (Gb) multi-level cell (MLC) NAND Flash memory devices. The 16 nm node is not only the leading Flash process, but it is also the most advanced processing node for any sampling semiconductor device. It solidifies Micron's leadership position in storage technology development and delivers on the company's vision to provide the most advanced semiconductor solutions.

Micron's 128 Gb MLC NAND Flash memory devices are targeted at applications like consumer SSDs, removable storage (USB drives and Flash cards), tablets, ultrathin devices, mobile handsets and data center cloud storage. The new 128 Gb NAND Flash memory provides the greatest number of bits per square millimeter and lowest cost of any MLC device in existence. In fact, the new technology could create nearly 6 TB of storage on a single wafer.

http://www.techpowerup.com/187274/mi...echnology.html
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