Micron Collaborates With Broadcom to Solve DRAM Timing Challenge
 

Micron Technology, Inc., one of the world's leading providers of advanced semiconductor solutions, today announced its collaboration with Broadcom Corporation to develop the industry's first solution designed for customers challenged by an intrinsic DDR3 timing parameter called tFAW, or four activate window.

tFAW refers to a DDR3 timing parameter that restricts data throughput in server, storage and networking applications and can compromise bandwidth by 15 to 35 percent. With every new DRAM generation, the access granularity is becoming double, causing some timing parameters like tRDD and tFAW to restrict data throughput. This creates challenges for high-performance applications because no more than four bank activate commands can be issued in any given tFAW period.

"The search for improved performance among network providers remains a challenge in the midst of continuous data overload," said Mike Howard, senior principal analyst of DRAM and memory at IHS iSuppli. "Architecture solutions that can open up bandwidth for high-performance applications will serve to extend operational efficiencies and boost overall network performance."

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