Stefan Mileschin

After samples of their upcoming 3D NAND were sighted in the wild at CES, Micron has taken the time to provide some details about the flash memory and their plans for it. A lot of this is a recap of information we've previously covered, but we've got some new details and a better idea of the roadmap for the future.

The entire flash memory industry has shifted focus to the devlopment of 3D NAND flash memory as the replacement for planar NAND flash memory. Samsung took an aggressive approach and has enjoyed some great success with their V-NAND branded 3D NAND, but it hasn't been an entirely trouble-free transition. Micron has been more conservative both in technology and timing, but they plan on having a strong competitor on the market later this year.

Micron's first generation 3D NAND takes the form of a 256Gb MLC die and a 384Gb TLC die (compare with their 128Gb 16nm MLC and TLC). At a high level, the die will be partitioned into four separate planes, compared to two planes for most competing NAND. A 480GB drive using the four-plane 256Gb dies will have access to approximately the same amount of parallelism as a 480GB drive using two-plane 128Gb dies, so this capacity jump won't bring the performance drops that have tarnished some NAND process shrinks.

http://www.anandtech.com/show/10028/...-status-update