Fujitsu Introduces New FRAM Featuring Wide Voltage Ranges, Low Power, Max Read/Write

@ 2012/10/26
Fujitsu Semiconductor America (FSA) today introduced a new Ferroelectric Random Access Memory (FRAM) device that operates from 2.7V to 5.5V, providing non-volatile data memory with high-speed read/write access times and low power consumption for products that require a wide voltage range.

The MB85RC256V is the latest addition to the growing family of Fujitsu V Series FRAM ICs, which provide memory capacities of 4Kbit, 16Kbit, 64Kbit and 256Kbit. FRAM combines the non-volatile data memory characteristics of ROM with the speed advantages of RAM. The new MB85RC256V features memory capacity of 256Kb with configurations of 32k x 8 bits, 1012 times read/write cycle capability, and 10 years of data retention at industrial temperature ranges. The IC supports a 2-wire serial bus transmission protocol (I2C) with frequencies up to 1MHz (when operating between 4.5V and 5.5V) and frequencies of 400kHz (when operating between 2.7V and 4.5V).

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