Fujitsu Introduces New FRAM Featuring Wide Voltage Ranges, Low Power, Max Read/Write
@ 2012/10/26Fujitsu Semiconductor America (FSA) today introduced a new Ferroelectric Random Access Memory (FRAM) device that operates from 2.7V to 5.5V, providing non-volatile data memory with high-speed read/write access times and low power consumption for products that require a wide voltage range.
The MB85RC256V is the latest addition to the growing family of Fujitsu V Series FRAM ICs, which provide memory capacities of 4Kbit, 16Kbit, 64Kbit and 256Kbit. FRAM combines the non-volatile data memory characteristics of ROM with the speed advantages of RAM. The new MB85RC256V features memory capacity of 256Kb with configurations of 32k x 8 bits, 1012 times read/write cycle capability, and 10 years of data retention at industrial temperature ranges. The IC supports a 2-wire serial bus transmission protocol (I2C) with frequencies up to 1MHz (when operating between 4.5V and 5.5V) and frequencies of 400kHz (when operating between 2.7V and 4.5V).
The MB85RC256V is the latest addition to the growing family of Fujitsu V Series FRAM ICs, which provide memory capacities of 4Kbit, 16Kbit, 64Kbit and 256Kbit. FRAM combines the non-volatile data memory characteristics of ROM with the speed advantages of RAM. The new MB85RC256V features memory capacity of 256Kb with configurations of 32k x 8 bits, 1012 times read/write cycle capability, and 10 years of data retention at industrial temperature ranges. The IC supports a 2-wire serial bus transmission protocol (I2C) with frequencies up to 1MHz (when operating between 4.5V and 5.5V) and frequencies of 400kHz (when operating between 2.7V and 4.5V).