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Follow us on FacebookGLOBALFOUNDRIES Unveils FinFET Transistor Architecture for Next-Gen Mobile Devices
@ 2012/09/21GLOBALFOUNDRIES today accelerated its leading-edge roadmap with the launch of a new technology designed for the expanding mobile market. The company's 14nm-XM offering will give customers the performance and power benefits of three-dimensional "FinFET" transistors with less risk and a faster time-to-market, helping the fabless ecosystem maintain its leadership in mobility while enabling a new generation of smart mobile devices.
The XM stands for "eXtreme Mobility," and it is the industry's leading non-planar architecture that is truly optimized for mobile system-on-chip (SoC) designs, providing a whole product solution from the transistor all the way up to the system level. The technology is expected to deliver a 40-60% improvement in battery life when compared to today's two-dimensional planar transistors at the 20 nm node.
The XM stands for "eXtreme Mobility," and it is the industry's leading non-planar architecture that is truly optimized for mobile system-on-chip (SoC) designs, providing a whole product solution from the transistor all the way up to the system level. The technology is expected to deliver a 40-60% improvement in battery life when compared to today's two-dimensional planar transistors at the 20 nm node.
