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@ 2012/02/10Micron Technology, Inc. is extending its legacy of memory leadership by introducing a new product category of low-power DDR3 solutions targeted at the tablet and ultrathin markets. These 2-gigabit (Gb) and 4 Gb "DDR3Lm" solutions focus on low self-refresh power (IDD6) for longer battery life, while maintaining the high performance and cost effectiveness of PC DRAM.
The first 2 Gb DDR3Lm will provide up to 50 percent self-refresh power savings versus standard 2 Gb DDR3L while driving performance up to -1600 MT/s when needed. Micron's 4 Gb DDR3Lm product delivers the same optimized power efficiency as the 2 Gb part, with a reduced chip count that is ideally suited for ultrathin and tablet customers. Both 2 Gb and 4 Gb DDR3Lm will be adopted into Micron's 30-nanometer (nm) class to further optimize the power and performance features, with the 4 Gb device hitting a 3.7mA IDD6 target in standby mode, yet still supporting speeds up to -1866 MT/s.
The first 2 Gb DDR3Lm will provide up to 50 percent self-refresh power savings versus standard 2 Gb DDR3L while driving performance up to -1600 MT/s when needed. Micron's 4 Gb DDR3Lm product delivers the same optimized power efficiency as the 2 Gb part, with a reduced chip count that is ideally suited for ultrathin and tablet customers. Both 2 Gb and 4 Gb DDR3Lm will be adopted into Micron's 30-nanometer (nm) class to further optimize the power and performance features, with the 4 Gb device hitting a 3.7mA IDD6 target in standby mode, yet still supporting speeds up to -1866 MT/s.
