Samsung kicks off production of 40nm 4Gb DDR3 DRAM

@ 2010/02/24
Samsung Electronics is ready to bring mo' RAM to the table as it begun production of a nice 4Gb DDR3 DRAM using the 40nm process technology. This new high-density chip can operate powered at 1.5V or 1.35V, works at up to 1600 MHz, and is already used for 16GB and 32GB RDIMMs and 8GB SO-DIMMs

"When our 40nm-class DDR3 was first introduced last July, we were well ahead of the curve for high density, high performance DDR3," said Dong-Soo Jun, executive vice president, memory marketing, Samsung Electronics. "Now, in just seven more months, we have introduced an ultra-low power 'Green Memory' - the 4Gb DDR3, which is double the density of its predecessor. At a module density of 16-gigabyte, the 4Gb based module can save 35 percent in power consumption, to support customer requirements for more energy-efficient designs."

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