Samsung to Make DDR3 Memory Using 30nm Process Technology

Samsung Electronics on Monday said that it had successfully completed customer evaluations of 2Gb DDR3 memory chips produced using 30nm-class fabrication process. Samsung is the first company to produce dynamic random access memory at 30nm-class node.

“Our accelerated development of next generation 30nm-class DRAM should keep us in the most competitive position in the memory market. Our 30nm-class process technology will provide the most advanced low-power DDR3 available today and therein the most efficient DRAM solutions anywhere for the introduction of consumer electronics devices and server systems,” said Soo-In Cho, president of memory division at Samsung Electronics.

The 30nm-class process when applied to DDR3 mass production raises productivity by 60% over 40nm-class DDR3 and reduces power consumption by up to 30% compared to 50nm-class DRAM, according to the DRAM maker. This will result in a doubling of production cost-efficiency compared to DRAM produced using 50nm to 60nm-class technology.