OCZ Technology Tweaks DDR2 Memory Latencies@ 2004/07/03
OCZ’s DDR2 533MHz products are rated at CL4 3-3-12 (CAS-TRCD-TRP-TRAS) timings, making them the first low-latency DDR2 memory modules available on the market today. The modules will be available in 512MB and 1024MB dual-channel kits or and rated to operate at 1.8V – 2.20V voltages. All products will be equipped with heat-spreader.
“The OCZ Technology PC2-4300 Platinum modules with our Enhanced Bandwidth feature-set will add the extra bite [to DDR2] that is only possible by running at reduced latencies,” said Dr. Michael Schuette, Director of Technology Development at OCZ Technology Group.
Enhanced Bandwidth (EB) technology is a set of means of increasing memory bandwidth through the optimization of memory latencies for the best possible interaction between the system memory and the chipset and memory controller. Through thorough analysis of memory traffic and benchmark results under various operating conditions as defined by different memory latency settings in the CMOS setup of the BIOS, OCZ has pinpointed the bottlenecks relevant for performance. Some conventional wisdom regarding some memory latencies were also found to no longer hold true. Using those findings, OCZ redesigned its memory products to be optimized for delivering the highest possible bandwidth to any computer system.
OCZ’ Enhanced Bandwidth (EB) technology challenges conventional wisdom that implicates increased CAS latency as the main factor causing reduced effective bandwidth. OCZ engineers have shown that by reducing the latency cycles associated with the precharge-to-activate delay and the RAS-to-CAS delay along with the use of the Variable Early Read Command feature of DDR, higher effective data bandwidth is possible.
OCZ Technology will be shipping PC2-4300 DDR2 products the first week of July, 2004. Later this year OCZ is expected to release 667MHz and 800MHz DDR2 memory modules.