Samsung to Release Low Power 4Gb DDR3 Memory Chip

@ 2009/02/02
Samsung Electronics, the world’s largest maker of dynamic random access memory, has announced that it had developed the world’s first 4Gb DDR3 memory chip made using 50nm process technology. The new memory chip may power 16GB or even 32GB memory modules for servers or 8GB modules for desktops or workstations.
“We have leveraged our strength in innovation to develop the first 4Gb DDR3, in leading the industry to higher DRAM densities. By designing our 4Gb DDR3 using state-of-the-art 50-nm class technology, we are setting the stage for what ultimately will result in significant cost-savings, for servers and for the overall computing market,” said Kevin Lee, vice president of technical marketing at Samsung Semiconductor.
The 4Gb DDR3 DRAM from Samsung operates at 1.35V, therein improving its through

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