Ultra-pure semiconductor to continue Moore’s Law (almost) indefinitely

Electron mobility researchers at the Physikalisch-Technische Bundesanstalt (PTB) have developed a high vacuum semiconductor crystal generation process which produces 5x more purity than traditional epitaxy systems. The new silicon promises a significant furthering of research into the manufacturing of semiconductor-based single-electron pumps as well as an investigation into quantum Hall resistance metrology, which could ultimately lead to a fundamental redefinition of the electrical current as a function of frequency and electron charge.