Hafnia Material Breakthrough Paves Way for Ferroelectric Computer Memory

@ 2024/02/12
Scientists and engineers have been experimenting with hafnium oxide over the past decade—many believe that this "elusive ferroelectric material" is best leveraged in next generation computing memory (due to its non-volatile properties), although this requires a major scientific breakthrough to get working in a practical manner. Hafnia's natural state is inherently non-ferroelectric, so it takes some effort to get it into a suitable state—a SciTechDaily article explores past efforts: "Scientists could only get hafnia to its metastable ferroelectric state when straining it as a thin, two-dimensional film of nanometer thickness." Research teams at the University of Rochester, New York and University of Tennessee, Knoxville have presented evidence of an exciting landmark development. Sobhit Singh, assistant professor at UoR's Department of Mechanical Engineering, believes that the joint effort has created a lane for the creation of bulk ferroelectric and antiferroelectric hafnia.

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