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@ 2023/05/05Eight times today's DRAM density
NEO Semiconductor has unveiled its "3D X-DRAM", which it is pitching as the world's first 3D NAND-like DRAM cell array.
Based on Neo's estimates, 3D X-DRAM technology can achieve 128 Gb density with 230 layers, which is eight times today's DRAM density.
NEO Semiconductor said its cell array structure is based on capacitor-less floating body cell technology. It can be manufactured using today's 3D NAND-like process and only needs one mask to define the bit line holes and form the cell structure inside the holes.
This cell structure simplifies the process steps and provides a high-speed, high-density, low-cost, and high-yield solution. Based on Neo's estimates, 3D X-DRAM technology can achieve 128 Gb density with 230 layers, which is eight times today's DRAM density.
NEO Semiconductor has unveiled its "3D X-DRAM", which it is pitching as the world's first 3D NAND-like DRAM cell array.
Based on Neo's estimates, 3D X-DRAM technology can achieve 128 Gb density with 230 layers, which is eight times today's DRAM density.
NEO Semiconductor said its cell array structure is based on capacitor-less floating body cell technology. It can be manufactured using today's 3D NAND-like process and only needs one mask to define the bit line holes and form the cell structure inside the holes.
This cell structure simplifies the process steps and provides a high-speed, high-density, low-cost, and high-yield solution. Based on Neo's estimates, 3D X-DRAM technology can achieve 128 Gb density with 230 layers, which is eight times today's DRAM density.
