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@ 2016/12/02A smaller version of existing 16nm technology
According to industry sources, TSMC is planning to introduce a 12-nanometer half-node process to enhance competition with 28nm and lower process nodes that have been adopted over the past few years.
The chip manufacturer’s 12nm process node will join its existing 16nm process portfolio as a smaller option in order to give it a competitive advantage against Samsung and GlobalFoundries. It is expected to offer improved leakage characteristics at a lower cost than its 16nm lineup. TSMC currently offers three variants of its 16nm FinFET process designed both for high-performance devices, as well as for ultra-low power situations requiring less than 0.6 volts.
According to industry sources, TSMC is planning to introduce a 12-nanometer half-node process to enhance competition with 28nm and lower process nodes that have been adopted over the past few years.
The chip manufacturer’s 12nm process node will join its existing 16nm process portfolio as a smaller option in order to give it a competitive advantage against Samsung and GlobalFoundries. It is expected to offer improved leakage characteristics at a lower cost than its 16nm lineup. TSMC currently offers three variants of its 16nm FinFET process designed both for high-performance devices, as well as for ultra-low power situations requiring less than 0.6 volts.
