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@ 2005/05/24Providing Low Standby Power and Improved Stackability
BOISE, ID, May 23, 2005 -- Micron Technology, Inc., today launched a family of Mobile DDR devices, with product samples of multiple densities now available. Micron’s Mobile DDR product family boasts a new architecture with Endur-IC™ technology specifically designed for mobile systems, and an enhanced feature set that delivers aggressive power specifications, superior bandwidth performance, and increased reliability over standard DRAM.
Micron’s Mobile DDR products exceed the current Joint Electron Device Engineering Council (JEDEC) standard and provide leading performance with shorter latency, higher speeds, full page burst, multiple addressing options, and according to leading customers, the industry’s lowest standby current. Micron leverages its stacked DRAM process technology to achieve the complete industrial temperature range, -40-degrees Celsius to +85-degrees Celsius.
BOISE, ID, May 23, 2005 -- Micron Technology, Inc., today launched a family of Mobile DDR devices, with product samples of multiple densities now available. Micron’s Mobile DDR product family boasts a new architecture with Endur-IC™ technology specifically designed for mobile systems, and an enhanced feature set that delivers aggressive power specifications, superior bandwidth performance, and increased reliability over standard DRAM.
Micron’s Mobile DDR products exceed the current Joint Electron Device Engineering Council (JEDEC) standard and provide leading performance with shorter latency, higher speeds, full page burst, multiple addressing options, and according to leading customers, the industry’s lowest standby current. Micron leverages its stacked DRAM process technology to achieve the complete industrial temperature range, -40-degrees Celsius to +85-degrees Celsius.
