Samsung’s 3D Vertical NAND Set to Improve NAND Densities

@ 2013/08/07
Ars Technica has posted information on Samsung’s new 3D Vertical NAND technology, and it promises to boost densities for SSDs and other similar devices dramatically. The first version will be manufactured on a 10nm process technology, and Samsung announced last night that they have begun mass production of the devices.

Using up to 24 vertical NAND elements, Samsung predicts that they will be able to scale up to 1Tb per individual NAND chip. It’s not clear exactly how large the initial chips will be, but with conventional 19nm NAND currently shipping in 128Gb capacities we’d expect at least two to four times as much storage per chip. That means using current SSD standards of eight channels of NAND we’d see capacities for “commodity” SSDs move from 128GB to 256GB or even 512GB, and with four NAND die per package we could easily hit 2TB SSDs. The days of needing a secondary storage device with a hard drive could be quickly coming to a close depending on the timing and pricing.

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