Follow us on Twitter
Follow us on FacebookTSMC and Cadence Strengthen Collaboration on 16 nm FinFET Process Development
@ 2013/04/09Cadence Design Systems, Inc., today announced an ongoing multi-year agreement with TSMC to develop the design infrastructure for 16-nanometer FinFET technology, targeting advanced node designs for mobile, networking, servers and FPGA applications. The deep collaboration, beginning earlier in the design process than usual, will effectively address the design challenges specific to FinFETs -- from design analysis through signoff -- and will deliver the infrastructure necessary to enable ultra low-power, high-performance chips.
FinFETs help deliver the power, performance, and area (PPA) advantages that are needed to develop highly differentiated SoC designs at 16 nanometers and smaller process technologies. Unlike a planar FET, the FinFET employs a vertical fin-like structure protruding from the substrate with the gate wrapping around the sides and top of the fin, thereby producing transistors with low leakage currents and fast switching performance. This extended Cadence-TSMC collaboration will produce the design infrastructure that chip designers need for accurate electrical characteristics and parasitic models required for advanced FinFET designs for mobile and enterprise applications.
FinFETs help deliver the power, performance, and area (PPA) advantages that are needed to develop highly differentiated SoC designs at 16 nanometers and smaller process technologies. Unlike a planar FET, the FinFET employs a vertical fin-like structure protruding from the substrate with the gate wrapping around the sides and top of the fin, thereby producing transistors with low leakage currents and fast switching performance. This extended Cadence-TSMC collaboration will produce the design infrastructure that chip designers need for accurate electrical characteristics and parasitic models required for advanced FinFET designs for mobile and enterprise applications.
