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@ 2013/02/15Micron Technology, Inc. today introduced the industry's smallest 128-gigabit (Gb) NAND flash memory device utilizing its award-winning 20-nanometer (nm) process technology. The new 128Gb device stores three bits of information per cell, called triple-level-cell (TLC), creating a highly compact storage solution.
Measuring 146 mm², the new 128Gb TLC device is more than 25 percent smaller than the same capacity of Micron's 20 nm multi-level-cell (MLC) NAND device. The 128 Gb TLC device is targeted at the cost-competitive removable storage market (flash cards and USB drives), which is projected to consume 35 percent of total NAND gigabytes in calendar 2013.1 Micron is now sampling the 128Gb TLC NAND device with select customers; it will be in production in calendar Q2.
Measuring 146 mm², the new 128Gb TLC device is more than 25 percent smaller than the same capacity of Micron's 20 nm multi-level-cell (MLC) NAND device. The 128 Gb TLC device is targeted at the cost-competitive removable storage market (flash cards and USB drives), which is projected to consume 35 percent of total NAND gigabytes in calendar 2013.1 Micron is now sampling the 128Gb TLC NAND device with select customers; it will be in production in calendar Q2.
